KRLML6402 datasheet(2/2 Pages) KEXIN

2 / 2 page

www.kexin.com.cn

SMD Type

MOSFET

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Min

Typ

Max

Unit

Drain-source Breakdown voltage

VDSS

ID= -250 μA, VGS = 0V

-20

VDS = -20 V, VGS = 0V

-1.0

VDS = -20 V, VGS = 0V, TJ=70℃

-25

Gate-source leadage

IGSS

VGS =±12V

±100

Gate threshold voltage

VGS(th)

VDS = VGS, ID= -250 μA

-0.40

-0.55

-0.95

ID= -3.7A, VGS = -4.5V

0.050

0.065

ID= -3.1A, VGS = -2.5V

0.080 0.0135

Forward Transconductance

gfs

VDS = -10 V, ID = -3.7 A

6.0

Input capacitance

Ciss

VDS = -10 V,

633

Output capacitance

Coss

VGS = 0 V,

145

Reverse transfer capacitance

Crss

f= 1MHz

110

Total Gate Charge

8.0

Gate-Source Charge

Qgs

1.2

1.8

Gate-Drain Charge

Qgd

2.8

4.2

Turn-on delay time

td(on)

ID= -3.7 A,

350

Rise time

VDD= -10 V,

Turn-off delay time

td(off)

RD= 2.7Ω

588

Fall time

RG= 89Ω

381

Reverse recovery time

trr

Reverse recovery charge

Qrr

Continuous source current

-1.3

Pulsed source current *1

ISM

-22

Diode forward voltage

VSD

TJ=25℃,VGS = 0 V, IS = -1.0 A *2

-1.2

*1 Repetitive rating;pulse width limited by max.junction temperature.

* 2 Pulse width ≤ 300μs, Duty cycle ≤ 2%

TJ=25℃, IF = -1.0 A,

di / dt = -100 A/μs *2

MOSFET symbo

l showing the

integral reverse

p-n junction diode

VDS = -10V ,VGS = -5.0 V , ID= -3.7 A

μA

IDSS

Gate-source leakage current

Static drain-source on- resistance

RDS(on)

HEXFET Power MOSFET

KRLML6402

Test conditions

KRLML6402 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

KRLML6402 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2

数据表下载

链接网址

KRLML6402 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

KRLML6402 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2

数据表 下载

链接网址

数据表下载