MMBT3906W datasheet(2/2 Pages) KEXIN

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SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter breakdown voltage

V(BR)CEO

IC =-1.0mA, IB =0

-40

Collector-base breakdown voltage

V(BR)CBO

IC =-10 ìA, IE =0

-40

Emitter-base breakdown voltage

V(BR)EBO

IE =-10 ìA, IC =0

-5

Base cutoff current

IBL

VCE =-30 V, VEB =-3.0V

-50

Collector cutoff current

ICEX

VCE =-30 V, VEB =-3.0V

-50

DC current gain *

HFE

IC =-0.1mA, VCE =-1.0V

IC =-1.0mA, VCE =-1.0V

IC =-10 mA, VCE =-1.0V

IC =-50 mA, VCE =-1.0V

IC =-100mA, VCE =-1.0V

100

300

IC =-10 mA, IB = -1.0 mA

-0.25

IC =-50 mA, IB = -5.0 mA

-0.4

IC =-10 mA, IB =-1.0mA

-0.65

-0.85

IC =-50 mA, IB = -5.0 mA

-0.95

Current-gain-bandwidth product

IC =-10 mA, VCE = -20 V, f = 100 MHz

250

MHz

Output capacitance

Cobo

VCB =-5.0V, IE = 0, f = 1.0 MHz

4.5

Input capacitance

Cibo

VEB =-0.5V, IC = 0, f = 1.0 MHz

Input impedance

hie

VCE =-10 V, IC = -1.0 mA, f = 1.0 kHz

2.0

kÙ

Voltage feedback ratio

hre

VCE =-10 V, IC = -1.0 mA, f = 1.0 kHz

0.1

X10

-4

Small-signal current gain

hfe

VCE =-10 V, IC = -1.0 mA, f = 1.0 kHz

100

400

Output admittance

hoe

VCE =-10 V, IC = -1.0 mA, f = 1.0 kHz

3.0

ìmhos

Noise figure

VCE =-5.0V, IC =-100ìA, RS =1.0 kÙ,

f= 1.0 kHz

4.0

Delay time

VCC =-3.0V, VBE =0.5 V

Rise time

IC =-10 mA, IB1 =-1.0mA

Storage time

VCC =-3.0V, IC = -10 mA

225

Fall time

IB1 =IB2 =-1.0mA

* Pulse test: pulse width

300 ìs, duty cycle

2.0%.

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

VCE(sat)

VBE(sat)

MMBT3906W

Marking

MMBT3906W 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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