KSS87 datasheet(2/2 Pages) KEXIN

部件名	KSS87

功能描述	N-Channel Enhancement Mode Vertical D-MOS Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

drain-source breakdown voltage

V(BR)DSS

ID = 250

A; VGS =0

200

VDS =60V; VGS = 0

200

VDS = 200 V; VGS =0

0.1

gate-source leakage current

IGSS

VGS =

20 V; VDS =0

100

gate-source threshold voltage

VGSth

ID =1mA; VGS =VDS

0.8

2.8

drain-source on-state resistance

RDSon

ID = 400 mA; VGS =10V

1.6

transfer admittance

| Yfs|ID = 400 mA; VDS = 25 V

140

750

input capacitance

Ciss

VDS =25V; VGS = 0;f = 1 MHz

100

120

output capacitance

Coss

VDS =25V; VGS =0;f =1MHz

reverse transfer capacitance

Crss

VDS =25V; VGS =0;f =1MHz

Switching turn-on time (see Figs 1 and 2)

ton

ID = 250 mA; VDD =50V;VGS = 0 to 10 V

Switching turn-off time (see Figs 1 and 2)

toff

ID = 250 mA; VDD =50V;VGS =0to 10 V

IDSS

drain-source leakage current

KSS87

Fig.1 Switching times test circuit.

Fig.2 Input and output waveforms.

KSS87

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