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数据搜索系统，热门电子元器件搜索 |
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BAS21 数据表(PDF) 1 Page - Vishay Siliconix |
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BAS21 数据表(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page  BAS19–BAS21 Vishay Telefunken Rev. 1, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85540 Surface Mount Switching Diode Features D Silicon planar epitaxial high speed diode D For switching and general purpose applications 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Working peak reverse voltage BAS19 VRWM 100 V gg =DC Blocking voltage BAS20 RWM =VR 150 V BAS21 200 V Repetitive peak reverse voltage BAS19 VRRM 120 V g BAS20 VRRM 200 V BAS21 VRRM 250 V Peak forward surge current t=1 ms IFSM 2.5 A g t=1s IFSM 0.5 A Repetitive peak forward current IFRM 625 mA Average forward current tp<0.3ms IFAV 200 mA Forward current TCase=TL (8mm from Case) =Tamb IF 400 mA Power dissipation TCase=TL (8mm from Case) =Tamb Ptot 250 mW Junction and storage temperature range Tj=Tstg –55...+150 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient RthJA 500 K/W |
类似零件编号 - BAS21 |
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类似说明 - BAS21 |
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