2SA1129 datasheet(2/3 Pages) ISC

部件名	2SA1129

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1129

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-10mA ,IB=0

-30

VCEsat-1

Collector-emitter saturation voltage

IC=-3A; IB=-0.1A

-0.3

VCEsat -2

Collector-emitter saturation voltage

IC=-5A; IB=-0.5A

-0.6

VBEsat-1

Base-emitter saturation voltage

IC=-3A; IB=-0.1A

-1.5

VBEsat -2

Base-emitter saturation voltage

IC=-5A; IB=-0.5A

-2.0

ICBO

Collector cut-off current

VCB=-30V; IE=0

-10

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-10

μA

hFE-1

DC current gain

IC=-3A ; VCE=-1V

200

hFE-2

DC current gain

IC=-5A ; VCE=-1V

Switching times resistive load

ton

Turn-on time

1.0

μs

tstg

Storage time

2.5

μs

Fall time

IC=-5.0A IB1=- IB2=-0.5A

RL=4Ω;VCC=-20V

1.0

μs

hFE-1 Classifications

40-80

60-120

100-200

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