2SA1186 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1186

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -25mA ; IB= 0

-150

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5.0A; IB= -0.5A

-2.0

ICBO

Collector Cutoff Current

VCB= -150V ; IE=0

-100

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-100

μA

hFE

DC Current Gain

IC= -3A ; VCE= -4V

180

COB

Output Capacitance

IE= 0 ; VCB= -80V;f= 1.0MHz

110

Current-Gain—Bandwidth Product

IE= 1A ; VCE= -12V

MHz

Switching times

ton

Turn-on Time

0.25

μs

tstg

Storage Time

0.8

μs

Fall Time

IC= -5A ,RL= 12Ω,

IB1= -IB2= -0.5A,VCC= -60V

0.2

μs

hFE Classifications

O:50-80

O50

O60

O70

50-60

60-70

70-80

P:80-130

P80

P90

P100

P110

P120

80-90

90-100

100-110

110-120

120-130

Y:130-180

Y130

Y140

Y150

Y160

Y170

130-140

140-150

150-160

160-170

170-180

isc Website：www.iscsemi.cn

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