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2SD560 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD560 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD560 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A; L= 1mH, IB= 3mA 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA B 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE=0 1 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 3 mA hFE-1 DC Current Gain IC= 3A ; VCE= 2V 2000 15000 hFE-2 DC Current Gain IC= 5A ; VCE= 2V 500 Switching times ton Turn-on Time 0.5 μs tstg Storage Time 1.0 μs tf Fall Time IC= 3A , IB1= -IB2= 3mA RL= 16.7Ω; VCC≈50V 1.0 μs hFE-1 Classifications R O Y 2000-5000 3000-7000 5000-15000 isc Website:www.iscsemi.cn 2 |
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