2N6500 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2N6500

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA; IB= 0

VCER(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA; RBE= 50Ω

110

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.3A

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3A; IB= 0.3A

2.5

ICEV

Collector Cutoff Current

VCE= 110V; VBE= -1.5V

VCE= 110V; VBE= -1.5V; TC= 150℃

ICEO

Collector Cutoff Current

VCE= 70V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE

DC Current Gain

IC= 3A; VCE= 2V

Is/b

Second Breakdown Collector

Current with Base Forward Biased

VCE= 40V, t= 1.0s, Nonrepetitive

0.4

Current-Gain

—Bandwidth Product

IC= 0.5A; VCE= 10V

MHz

COB

Collector Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

175

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