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MJ413 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ413 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ413 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 325 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.25 V ICEX Collector Cutoff Current VCE= 400V;VEB(off)=1.5V VCE= 400V;VEB(off)=1.5V;TC=125℃ 0.25 0.5 mA IEBO Emitter Cutoff current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE=5V 20 80 hFE-2 DC Current Gain IC= 1A; VCE=5V 15 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE=10V; f=1.0MHz 2.5 MHz isc Website:www.iscsemi.cn |
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