BU208D datasheet(2/2 Pages) ISC

部件名	BU208D

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU208D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA; IB= 0

700

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4.5A; IB= 2A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4.5A; IB= 2A

1.3

ICES

Collector Cutoff Current

VCE= 1500V; VBE= 0

VCE= 1500V; VBE= 0; TC= 125℃

1.0

2.0

IEBO

Emitter Cutoff Current

VEB= 5.0V; IC= 0

300

hFE

DC Current Gain

IC= 1A; VCE= 5V

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V; ftest= 5MHz

MHz

VECF

C-E Diode Forward Voltage

IF= 4A

Switching Times( Inductive load)

Storage Time

μs

Fall Time

IC= 4.5A; IB= 1.8A; LB= 3μH;

VCC= 140V, LC= 0.9mH

0.55

μs

isc Website：www.iscsemi.cn

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