2SC5387 datasheet(2/2 Pages) ISC

部件名	2SC5387

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC5387

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA; IB= 0

600

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 8A; IB= 2A

3.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 8A; IB= 2A

1.5

ICBO

Collector Cutoff Current

VCB= 1200V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

μA

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

hFE-2

DC Current Gain

IC= 8A ; VCE= 5V

4.3

7.8

Current-Gain—Bandwidth Product

IC= 0.1A ; VCE= 10V

1.7

MHz

COB

Output Capacitance

IE= 0 ; VCB= 10V; ftest= 1.0MHz

130

tstg

Storage Time

2.5

3.5

μs

Fall Time

ICP= 6A , IB1(end)= 1.2A;fH= 64kHz

0.15

0.3

μs

isc Website：www.iscsemi.cn

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