2SC2570A datasheet(1/5 Pages) ISC

部件名	2SC2570A

功能描述	isc Silicon NPN RF Transistor

PDF	5 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 5 page

INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

2SC2570A

DESCRIPTION

·Low Noise and High Gain

NF = 1.5 dB TYP.

Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA

·Wide Dynamic Range

NF = 1.9 dB TYP.

Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA

APPLICATIONS

·Designed for use in low-noise amplifier of VHF ~ UHF

stages.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

25

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

3.0

V

IC

Collector Current-Continuous

70

mA

PC

Collector Power Dissipation

@TC=25℃

0.6

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

isc Website：www.iscsemi.cn

类似零件编号 - 2SC2570A

制造商	部件名	数据表	功能描述
NEC	2SC2570A	119Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC2570A	293Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC	2SC2570A-T	119Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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