2SC2734 datasheet(2/4 Pages) ISC

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INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

2SC2734

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA ; RBE= ∞

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10μA ; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 10mA ; IB= 5mA

0.7

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

0.5

μA

hFE

DC Current Gain

IC= 5mA ; VCE= 10V

200

Current-Gain—Bandwidth Product

IC= 10mA ; VCE= 10V

1.4

3.5

GHz

COB

Output Capacitance

IE= 0 ; VCB= 10V;f= 1.0MHz

0.9

1.5

Conversion Gain

IC= 2mA ; VCC= 6V;f= 900MHz

fOSC= 930MHz(0dBm),

fout= 30MHz

Noise Figure

IC= 2mA ; VCC= 6V;f= 900MHz

fOSC= 930MHz(0dBm),

fout= 30MHz

VOSC

Oscillating output voltage

IC= 5mA ; VCC= 6V;f= 930MHz

140

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