2SC4536 datasheet(2/6 Pages) ISC

2 / 6 page

INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

2SC4536

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

ICBO

Collector Cutoff Current

VCB= 20V; IE= 0

5.0

μA

IEBO

Emitter Cutoff Current

VEB= 2V; IC= 0

5.0

μA

hFE

DC Current Gain

IC= 50mA ; VCE= 10V

200

︱S21e︱

Insertion Power Gain

IC= 50mA ; VCE= 10V;f= 1.0GHz

5.5

7.3

Noise Figure

IC= 50mA ; VCE= 10V;f= 500MHz

1.5

Noise Figure

IC= 50mA ; VCE= 10V;f= 1.0GHz

2.0

IM2

2nd Intermodulation Distortion

VCE = 10 V, IC = 50 mA, RS = RL = 75Ω

Pin = 105 dBμV/75 Ω, f1 = 190 MHz

f2 = 90 MHz, f = f1 － f2

IM3

3rd Intermodulation Distortion

VCE = 10 V, IC = 50 mA, RS = RL = 75Ω

Pin = 105 dBμV/75 Ω, f1 = 190 MHz

f2 = 200 MHz, f = 2 × f1 － f2

hFE Classification

Class

Marking

hFE

40-80

60-120

100-200

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