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SGSF313 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 SGSF313
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

SGSF313 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  SGSF313 Datasheet HTML 1Page - Inchange Semiconductor Company Limited SGSF313 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
SGSF313
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; L= 25mH
450
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1 A ;IB= 0.1A
IC= 1 A ;IB= 0.1A ;TC=125℃
0.5
0.6
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 2A ;IB= 0.4 A
IC= 2A ;IB= 0.4 A ;TC=125℃
0.45
0.8
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 2.5A ;IB= 0.5 A
B
0.75
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
B
1.1
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.25
V
VBE(sat)-3
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5 A
1.3
V
ICES
Collector Cutoff Current
VCE= 1000V;VBE= 0
VCE= 1000V;VBE= 0;TC=125℃
0.01
0.1
mA
ICEO
Collector Cutoff Current
VCE= 450V; IB= 0
0.1
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2.5V
IC= 1A ; VCE= 2.5V;TC=125℃
12
25
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
IC= 1A ; VCE= 5V;TC=125℃
15
28
45
hFE-3
DC Current Gain
IC= 2A ; VCE= 1V
IC= 2A ; VCE= 1V;TC=125℃
6
12
hFE-4
DC Current Gain
IC= 5mA; VCE= 5V
10
Switching Times; Resistive Load
ton
Turn-on Time
0.5
1
μs
tS
Storage Time
1.5
2.5
μs
tf
Turn-off Time
VCC=250V ,IC=2.5A
IB1= 0.5A;IB2= -1A
0.18
0.3
μs
isc Website：www.iscsemi.cn



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