BU920T datasheet(1/2 Pages) ISC

部件名	BU920T

功能描述	isc Silicon NPN Darlington Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BU920T

DESCRIPTION

·High Voltage

·DARLINGTON

APPLICATIONS

·Designed for automotive ignition applications and inverter

circuits for motor control.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage VBE= 0

400

V

VCEO

Collector-Emitter Voltage

350

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

10

A

ICM

Collector Current-peak

15

A

IB

B

Base Current

5

A

PC

Collector Power Dissipation

@TC=25℃

105

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.2

℃/W

isc Website：www.iscsemi.cn

类似零件编号 - BU920T

制造商	部件名	数据表	功能描述
STMicroelectronics	BU920T	272Kb / 5P	HIGH VOLTAGE POWER DISSIPATION Oct-1988

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