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2SA636 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA636 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.8 -2.0 V ICBO Collector cut-off current VCB=-45V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 40 250 COB Output capacitance IE=0; VCB=-10V;f=1MHz 60 pF fT Transition frequency IC=-0.1A ; VCB=-5V 45 MHz hFE-2 classifications N M L K 40-60 50-100 80-160 120-250 2 |
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