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BUX82 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX82 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX82/83 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUX82 400 V(BR)CEO Collector-Emitter Breakdown Voltage BUX83 IC= 100mA ; IB= 0; L= 25mH 450 V BUX82 500 V(BR)CER Collector-Emitter Breakdown Voltage BUX83 IC= 100mA ; RBE= 100Ω; L= 15mH 500 V BUX82 3.0 VCE(sat)-1 Collector-Emitter Saturation Voltage BUX83 IC= 4A; IB= 1.25A B 1.6 V BUX82 1.5 VCE(sat)-2 Collector-Emitter Saturation Voltage BUX83 IC= 2.5A; IB= 0.5A 1.4 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A B 1.6 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V BUX82 VCES=800V; VBE(off)= 1.5V VCES=800V; VBE(off)= 1.5V,TC=125℃ 1.0 2.0 ICES Collector Cutoff Current BUX83 VCES=1000V;VBE(off)=1.5V VCES=1000V;VBE(off)=1.5V,TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 mA hFE DC Current Gain IC= 1.2A ; VCE= 5V 30 COB Output Capacitance IE= 0;VCB= 10V;ftest= 1MHz 500 pF fT Current-Gain--Bandwidth Product IC= 0.2A ; VCE= 10V ;ftest= 1MHz 6 MHz Switching Times ton Turn-On Time 0.3 0.5 μs tstg Storage Time 2.0 3.5 μs tf Fall Time IC= 2.5A; IB1= 0.5A;IB2= -1A; VCC= 250V 0.3 μs isc Website:www.iscsemi.cn 2 |
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