2SA1386 datasheet(2/3 Pages) ISC

部件名	2SA1386

功能描述	isc Silicon PNP Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1386

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -25mA ; IB= 0

-160

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5.0A; IB= -0.5A

-2.0

ICBO

Collector Cutoff Current

VCB= -160V ; IE=0

-100

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-100

μA

hFE

DC Current Gain

IC= -5A ; VCE= -4V

180

COB

Output Capacitance

IE=0 ; VCB= -10V;f= 1.0MHz

500

Current-Gain—Bandwidth Product

IE=2A ; VCE= -12V

MHz

Switching times

ton

Turn-on Time

0.3

μs

tstg

Storage Time

0.7

μs

Fall Time

IC= -10A ,RL= 4Ω,

IB1= -IB2= -1A,VCC=-40V

0.2

μs

hFE Classifications

50-100

70-140

90-180

isc Website：www.iscsemi.cn

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