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2SA648 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA648 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA648 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-3A ; VCE=-5V 30 120 fT Transition frequency IC=-1A ; VCE=-5V 10 MHz 2 |
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