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2SA1396 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SA1396
功能描述  Silicon PNP Power Transistors
PDF  4 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SA1396 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1396 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA1396 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SA1396 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SA1396 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1396
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-5A;IB=-0.5A;L=1mH
-100
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
μA
ICER
Collector cut-off current
VCE=-100V; RBE=51Ω;
Ta=125℃
-1
mA
ICEX
Collector cut-off current
VCE=-100V;VBE(off)=1.5V
Ta=125℃
-0.01
-1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
40
200
hFE-2
DC current gain
IC=-3A ; VCE=-5V
40
200
hFE-3
DC current gain
IC=-5A ; VCE=-5V
20
Switching times
ton
Turn-on time
0.5
μs
ts
Storage time
1.5
μs
tf
Fall time
IC=-5A ;IB1=-IB2=-0. 5A
VCC≈50V;RL=10Ω
0.5
μs
hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2



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