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2SA771 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA771 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA770 -60 V(BR)CEO Collector-emitter breakdown voltage 2SA771 IC=-25mA ,IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V 2SA770 VCB=-60V; IE=0 ICBO Collector cut-off current 2SA771 VCB=-80V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -1.0 mA hFE DC current gain IC=-1A ; VCE=-4V 40 fT Transition frequency IC=-0.5A ; VCE=-12V 10 MHz Switching times tr Rise time 0.9 μs tstg Storage time 1.0 μs tf Fall time IC=-3A ; VCC=-9V IB1=-IB2=-0.4A;RL=3Ω 0.1 μs 2 |
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