BD201F datasheet(1/2 Pages) ISC

部件名	BD201F

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD201F/203F

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO = 45V(Min)- BD201F

60V(Min)- BD203F

·Complement to Type BD202F/204F

APPLICATIONS

·Designed for use in hi-fi equipment delivering an output

of 15 to 15 W into a 4Ωor 8Ωload.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD201F

60

VCBO

Collector-Base Voltage

BD203F

60

V

BD201F

45

VCEO

Collector-Emitter Voltage

BD203F

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

12

A

IB

B

Base Current

3

A

PC

Collector Power Dissipation

@ TC=25℃

32

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

6.3

℃/W

isc Website：www.iscsemi.cn

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