MJ12021 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ12021

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=100mA ; IB=0

450

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1A

1.2

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

1.5

ICEV

Collector Cutoff Current

VCEV=850V;VBE(off)=1.5V

VCEV=850V;VBE(off)=1.5V;TC=100℃

0.25

1.5

ICER

Collector Cutoff Current

VCE= 850V; RBE= 50Ω,TC= 100℃

2.5

IEBO

Emitter Cutoff Current

VEB= 6V; IC=0

1.0

hFE

DC Current Gain

IC= 8A ; VCE= 5V

Current-Gain—Bandwidth Product

IC= 1A; VCE= 10V; ftest=1MHz

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1kHz

350

Switching times;Inductive Load

Storage Time

550

1200

Fall Time

IC= 5A , VCC= 60V; IB1= 1A;

PW= 8μs; VBE(off)= 4V

Duty Cycle≤2.0%

100

300

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