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D44D1 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D44D1 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors D44D1/2/3/4/5/6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D44D1 D44D2 D44D3 -60 D44D4 -80 D44D5 -100 VCEO(SUS) Collector-Emitter Sustaining Voltage D44D6 IC= -30mA ;IB=0 B -120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA B -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -2.5 V VECF-1 C-E Diode Forward Voltage IF= -5A -2.0 V ICEO Collector Cutoff Current VCE= 1/ 2VCEOmax; IB= 0 -0.2 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 VCB= 1/ 2VCBOmax;IE= 0;TC= 150℃ -0.4 -2.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 mA hFE DC Current Gain IC= -1A ; VCE= -2V 2000 isc Website:www.iscsemi.cn 2 |
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