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IRF630N 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 IRF630N
功能描述  isc N-Channel MOSFET Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

IRF630N 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRF630N Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF630N Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF630N
·ELECTRICAL CHARACTERISTICS (T =25℃
C
)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID=0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(ON)
Drain-Source On-stage Resistance
VGS=10V; ID=5.4A
0.3
Ω
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=200V; VGS=0
25
uA
VSD
Diode Forward Voltage
IF= 5.4A; VGS=0
1.3
V
isc Website：www.iscsemi.cn



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