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2SA1879 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1879 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1879 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3.5A; IB=-0.35A -0.3 V VBEsat Base-emitter saturation voltage IC=-3.5A; IB=-0.35A -1.2 V ICBO ICEO Collector cut-off current At rated volatge -0.1 mA IEBO Emitter cut-off current At rated volatge -0.1 mA hFE DC current gain IC=-3.5A ; VCE=-2V 70 fT Transition frequency IC=-0.7A ; VCE=-10V 50 MHz Switching times ton Turn-on time 0.3 μs ts Storage time 1.5 μs tf Fall time IC=-3.5A;IB1=-IB2=-0.35A , RL=8Ω;VBB2=-4V 0.2 μs 2 |
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