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BUV22 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BUV22
功能描述  isc Silicon NPN Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BUV22 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUV22 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV22 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUV22
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
250
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 20A ;IB= 2.5A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 40A ;IB= 4A
1.5
V
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
3.0
mA
ICEX
Collector Cutoff Current
VCE= 300V;VBE= -1.5V
VCE= 300V;VBE= -1.5V;TC=125℃
3.0
12.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 10A ; VCE= 4V
20
60
hFE-2
DC Current Gain
IC= 20A ; VCE= 4V
10
fT
Current-Gain—Bandwidth Product
IC= 2A;VCE= 15V, ftest= 4MHz
8
MHz
Switching Times
ton
Turn-on Time
0.8
μs
ts
Storage Time
2.0
μs
tf
Fall Time
IC= 20A; IB1=-IB2= 2.5A;
VCC= 100V; RC= 5Ω
0.35
μs
isc Website：www.iscsemi.cn



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