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2SC1730 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1730 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1730 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 40 180 fT Current-Gain—Bandwidth Product IE= -5mA ; VCE= 10V 800 1100 MHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.5 pF rbb’ • CC Base Time Constant VCE= 10V,IE = -5mA,f = 31.9 MHz 10 15 ps hFE Classifications Marking M L K hFE 40-80 60-120 90-180 isc Website：www.iscsemi.cn 2 |
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