2SC3122 datasheet(1/4 Pages) ISC

部件名	2SC3122

功能描述	isc Silicon NPN RF Transistor

PDF	4 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

2SC3122

DESCRIPTION

·High Gain-

: Gpe= 24dB TYP. @ f= 200MHz

·Low Noise-

: NF= 2.0dB TYP. @ f= 200MHz

APPLICATIONS

·Designed for TV VHF RF amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

3

V

IC

Collector Current-Continuous

20

mA

IB

B

Base Current-Continuous

10

mA

PC

Collector Power Dissipation

@TC=25℃

0.15

W

TJ

Junction Temperature

125

℃

Tstg

Storage Temperature Range

-55~125

℃

isc Website：www.iscsemi.cn

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