2SA671 datasheet(1/2 Pages) ISC

部件名	2SA671

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA671

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(SUS)= -1.0V(Max)@ IC= -2.0A

·DC Current Gain

: hFE= 35-320@ IC= -0.5A

·Complement to Type 2SC1061

APPLICATIONS

·Designed for use in low frequency power amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-4

V

IC

Collector Current-Continuous

-3

A

ICM

Collector Current-Peak

-6

A

IB

B

Base Current-Continuous

-0.5

A

PC

Total Power Dissipation

@ TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

5.0

℃/W

isc Website：www.iscsemi.cn

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