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2SA900 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA900 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon PNP Power Transistor 2SA900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -18 V V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA; IE= 0 -20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.2 V ICBO Collector Cutoff Current VCB= -10V; IE= 0 -1 μA ICEO Collector Cutoff Current VCE= -18V; IB= 0 -10 μA hFE-1 DC Current Gain IC= -0.5A; VCE= -2V 90 470 hFE-2 DC Current Gain IC= -1.5A ; VCE= -2V 50 fT Current-Gain—Bandwidth Product IC= -50mA; VCE= -6V 200 MHz COB Output Capacitance IE=0; VCB= -6V, ftest= 1MHz 40 pF hFE-1 Classifications Q R S T U 90-155 130-210 180-280 250-360 330-470 |
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