2SA1006A datasheet(2/2 Pages) ISC

部件名	2SA1006A

功能描述	isc Silicon PNP Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Power Transistor

2SA1006A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -500mA; IB= -50mA

-1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -500mA; IB= -50mA

-1.5

ICBO

Collector Cutoff Current

VCB= -150V; IE= 0

-1.0

μA

IEBO

Emitter Cutoff Current

VEB= -3.0V; IC=0

-1.0

μA

hFE-1

DC Current Gain

IC= -5mA ; VCE= -5V

hFE-2

DC Current Gain

IC= -150mA ; VCE= -5V

320

Current-Gain—Bandwidth Product

IC= -100mA ; VCE= -10V

MHz

COB

Output Capacitance

IE= 0 ; VCB= -10V;f= 1.0MHz

hFE-2 Classifications

60-120

100-200

160-320

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