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2SA1012 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1012 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1012 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -50 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A B -0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A B -1.2 V ICBO Collector Cutoff Current VCB= -50V ; IE= 0 -1 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 μA hFE-1 DC Current Gain IC= -1A ; VCE= -1V 70 240 hFE-2 DC Current Gain IC= -3A ; VCE= -1V 30 fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -4V 60 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 170 pF Switching Times ton Turn-on Time 0.1 μs tstg Storage Time 1.0 μs tf Fall Time IC= -3A ,RL= 10Ω, IB1= -IB2= -0.15A,VCC= -30V 0.1 μs hFE-1 Classifications O Y 70-140 120-240 isc Website:www.iscsemi.cn 2 |
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