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2SA766 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA766 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA766 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;L=25mH,RBE=5kΩ -150 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -1.0 V VBE-1 Base-emitter saturation voltage IC=-0.1A ; VCE=-5V -0.8 V VBE-2 Base-emitter saturation voltage IC=-0.5A ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -30 μA hFE-1 DC current gain IC=-0.1A ; VCE=-5V 35 150 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 35 fT Transition frequency IE=0.1A ; VCB=-10V 15 MHz 2 |
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