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BU941 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU941 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0;L= 10mH 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA B 1.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12 A; IB= 300mA B 2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 250mA B 2.5 V VBE(sat)-3 Base-Emitter Saturation Voltage IC= 12 A; IB= 300mA B 2.7 V ICES Collector Cutoff Current VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ 0.1 0.5 mA ICEO Collector Cutoff Current VCE= 450V; IB= 0 VCE= 450V; IB= 0;Tj= 125℃ 0.1 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 20 mA hFE DC Current Gain IC= 5A ; VCE= 10V 300 VECF C-E Diode Forward Voltage IF= 10A 2.5 V isc Website:www.iscsemi.cn |
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