BUT12 datasheet(1/2 Pages) ISC

部件名	BUT12

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUT12

DESCRIPTION

·High Voltage

·High Speed Switching

APPLICATIONS

·Converters

·Inverters

·Switching regulators

·Motor control systems

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

850

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

20

A

IB

B

Base Current-Continuous

4

A

IBM

Base Current-Peak

6

A

PC

Collector Power Dissipation

@TC=25℃

125

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

isc Website：www.iscsemi.cn

类似零件编号 - BUT12

制造商	部件名	数据表	功能描述
NXP Semiconductors	BUT12	100Kb / 12P	Silicon diffused power transistors 1997 Aug 13
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