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2SB950A 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SB950A
功能描述  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SB950A 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB950A Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB950A Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB950A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -30mA ; IB= 0
-80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -12mA
B
-2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -5A; IB= -20mA
B
-4.0
V
VBE(on)
Base-Emitter On Voltage
IC= -3A ; VCE= -3V
-2.5
V
ICBO
Collector Cutoff Current
VCB= -100V ; IE= 0
-0.2
mA
ICEO
Collector Cutoff Current
VCE= -40V ; IB= 0
B
-0.5
mA
IEBO
Emitter Cutoff Current
VEB= -5V ; IC= 0
-2.0
mA
hFE-1
DC Current Gain
IC= -0.5A ;VCE= -3V
1000
hFE-2
DC Current Gain
IC= -3A ; VCE= -3V
2000
10000
fT
Current-Gain—Bandwidth Product
IC=-0.5A;VCE= -10V;ftest=1MHz
20
MHz
Switching times
ton
Turn-on Time
0.3
μs
tstg
Storage Time
2.0
μs
tf
Fall Time
IC= -3A,IB1= -IB2= -12mA,
VCC= -50V
0.5
μs
hFE-2 Classifications
Q
P
2000-5000
4000-10000
isc Website：www.iscsemi.cn
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