2SD803 datasheet(1/2 Pages) ISC

部件名	2SD803

功能描述	isc Silicon NPN Darlingtion Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

2SD803

DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

hFE = 2000 (Min) @ IC =1 Adc

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= 100V(Min)

·Wide Area of Safe Operation

APPLICATIONS

·Designed for high power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

8

A

IB

B

Base Current -Continuous

1

A

PC

Collector Power Dissipation@TC=25℃

100

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

isc Website：www.iscsemi.cn

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