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2SD847 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD847 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2SD847 DESCRIPTION ·Good Linearity of hFE ·High Collector Current ·Wide Area of Safe Operation ·High Reliability ·Complement to Type 2SB757 APPLICATIONS ·Audio amplifier applications ·Series regulators applications ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W |
类似零件编号 - 2SD847 |
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类似说明 - 2SD847 |
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