2SD1027 datasheet(2/2 Pages) ISC

部件名	2SD1027

功能描述	isc Silicon NPN Darlington Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD1027

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.1A, IB= 0

200

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 10A ,IB= 30mA

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 10A ,IB= 30mA

2.0

ICBO

Collector Cutoff current

VCB= 200V, IE= 0

0.1

ICEO

Collector Cutoff current

VCE= 200V, IB= 0

0.1

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

Current-Gain—Bandwidth Product

IC= 1.5A ; VCE= 10V

MHz

hFE

DC Current Gain

IC= 10A ; VCE= 3V

1500

Switching Times

ton

Turn-On Time

2.0

μs

tstg

Storage Time

8.0

μs

Fall Time

IC = 10A,IB1 = -IB2= 30mA;

RL= 3Ω;VBB2= 4V

5.0

μs

isc Website：www.iscsemi.cn

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