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D1410 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D1410 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 40mH 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.5 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 500 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 500 μA hFE -1 DC Current Gain IC= 2A ; VCE= 2V 2000 hFE -2 DC Current Gain IC= 4A ; VCE= 2V 200 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1MHz 35 pF Switching times ton Turn-on Time 1.0 μs tstg Storage Time 8.0 μs tf Fall Time IC= 4A , IB1= -IB2= 40mA RL= 25Ω; VCC= 100V 5.0 μs isc Website:www.iscsemi.cn 2 |
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