2N5344 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Power Transistor

2N5344

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -10mA ; IB= 0

-250

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -0.2A

-3.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -1A; IB= -0.2A

-1.5

ICBO

Collector Cutoff Current

VCB= -250V; IE= 0

-0.1

ICEX

Collector Cutoff Current

VCE= -225V; VBE(off)= -1.5V

VCE= -225V; VBE(off)= -1.5V,TC= 150℃

-0.1

-1.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

-0.1

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -5V

100

hFE-2

DC Current Gain

IC= -1A ; VCE= -5V

Current-Gain

—Bandwidth Product

IC= -0.1A ; VCE= -20V

MHz

COB

Output Capacitance

IE= 0; VCB= -10V

200

Switching times

ton

Turn-On Time

0.2

μs

toff

Turn-Off Time

IC= -0.5A, IB1= -IB2= -0.05A;

VCC= -100V

0.7

μs

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