PTH03050YAST datasheet(1/4 Pages) EMERSON-NETWORKPOWER

部件名	PTH03050YAST

功能描述	DC-DC CONVERTERS

PDF	4 Pages

Scroll/Zoom	100%

制造商	EMERSON-NETWORKPOWER [Emerson Network Power]

网页	http://www.emersonnetworkpower.com

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DC-DC CONVERTERS

Non-isolated DDR/QDR Memory Bus Termination Module

1

NEW Product

File Name: PTHxx050Y.pdf Rev (02): 19 Dec 2005

2 YEAR WARRANTY

All specifications are typical at nominal input, VREF = 1.25 V, full load at 25 °C

unless otherwise stated. Cin, Co1 and Co2 = typical value

SPECIFICATIONS

The PTHxx050Y are a new series of non-isolated dc-dc converters designed

specifically for bus termination in DDR and QDR memory applications. Operating from

either a 3.3 Vdc, 5 Vdc or 12 Vdc input, the modules generate a VTT output that will

source or sink up to 6 A of current to accurately track their VREF input. VTT is the

required bus termination supply voltage, and VREF is the reference voltage for the

memory and chipset bus receiver comparators. VREF is usually set to half the VDDQ

power supply voltage. The PTHxx050Y series employs an actively switched

synchronous rectifier output to provide state of the art stepdown switching conversion.

The products are small in size and are an ideal choice where space, performance and

high efficiency are desired.

• VTT bus termination output (output tracks the system VREF)

• 6 A output current (8 A Peak)

• 3.3 Vdc, 5 Vdc or 12 Vdc input voltage

• DDR and QDR compatible

• ON/OFF inhibit (for VTT standby)

• Under-voltage lockout

• Operating temperature range: -40 ºC to +85 ºC

• Efficiencies up to 88%

• Output overcurrent protection (non-latching, auto-reset)

• Point-of-Load-Alliance (POLA) compatible

• Available RoHS compliant

PTHxx050Y

3.3/5/12 Vin Single Output

OUTPUT SPECIFICATIONS

Output current

All models

(over ∆VREF range)

Continuous (See Note 1)

±6 A

Repetitive pulse (See Note 2)

±8 A

Tracking range for VREF

0.55-1.8 V

Tracking tolerance to VREF (VTT - VREF)

-10 mV to +10mV

(over line, load

and temperature)

Ripple and noise

20 MHz bandwidth

20 mV pk-pk

Load transient response

80 µs settling time

(See Note 5)

Overshoot/undershoot 25 mV typ.

Output capacitance:

Non-ceramic values

PTH03050Y 470 µF typ., 3,300 µF max.

(See Notes 5 and 6)

PTH05050Y 470 µF typ., 3,300 µF max.

PTH12050Y 940 µF typ., 3,300 µF max.

Ceramic values

PTH03050Y

200 µF typ., 300 µF max.

(See Note 5)

PTH05050Y

200 µF typ., 300 µF max.

PTH12050Y

400 µF typ., 600 µF max.

(See Note 7)

ESR (non-ceramic)

4 m

Ω min

INPUT SPECIFICATIONS

Input current

No load

10 mA

Input voltage range

PTH03050Y

2.95-3.65 Vdc

PTH05050Y

4.5-5.5 Vdc

PTH12050Y

10.8-13.2 Vdc

Undervoltage lockout:

PTH03050Y

Vin increasing

2.45 V typ., 2.80 V max.

Vin decreasing

2.20 V min., 2.40 V typ.

PTH05050Y

Vin increasing

4.30 V typ., 4.45 V max.

Vin decreasing

3.40 V min., 3.70 V typ.

PTH12050Y

Vin increasing

9.5 V typ., 10.4 V max.

Vin decreasing

8.80 V min., 9.0 V typ.

INPUT SPECIFICATIONS CONTD.

Input capacitance

PTH03050Y and PTH05050Y

470 µF

(See Note 4)

PTH12050Y

560 µF

Remote ON/OFF

Active high

GENERAL SPECIFICATIONS

Efficiency

PTH03050Y

88% typ.

Io = 4 A

PTH05050Y

87% typ.

PTH12050Y

84% typ.

Insulation voltage

Non-isolated

Switching frequency

PTH03050Y

550- 650 kHz

PTH05050Y

550-650 kHz

PTH12050Y

200-300 kHz

Approvals and

EN60950

standards

UL/cUL60950

Material flammability

UL94V-0

Dimensions

(L x W x H)

22.10 x 12.57 x 8.50 mm

0.870 x 0.495 x 0.335 in

Weight

2.9 g (0.10 oz)

MTBF

Telcordia SR-332

6,000,000 hours

ENVIRONMENTAL SPECIFICATIONS

Thermal performance

Operating ambient,

-40 ºC to +85 ºC

(See Note 2)

temperature

Non-operating

-40 ºC to +125 ºC

MSL (‘Z’ suffix only)

JEDEC J-STD-020C Level 3

PROTECTION

Overcurrent threshold

All models

12 A typ.

(auto reset)

类似零件编号 - PTH03050YAST

制造商	部件名	数据表	功能描述
Texas Instruments	PTH03050YAST	1Mb / 19P	6-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES REVISED OCTOBER 2005
Texas Instruments	PTH03050YAST.B	1Mb / 19P	6-A NON-ISOLATED DDR/QDR MEMORY BUS TERMINATION MODULES REVISED OCTOBER 2005

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