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TLMH3100 数据表(PDF) 2 Page - Vishay Siliconix

部件名 TLMH3100
功能描述  Bicolor SMD LED
PDF  7 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

TLMH3100 数据表(HTML) 2 Page - Vishay Siliconix

  TLMH3100 Datasheet HTML 1Page - Vishay Siliconix TLMH3100 Datasheet HTML 2Page - Vishay Siliconix TLMH3100 Datasheet HTML 3Page - Vishay Siliconix TLMH3100 Datasheet HTML 4Page - Vishay Siliconix TLMH3100 Datasheet HTML 5Page - Vishay Siliconix TLMH3100 Datasheet HTML 6Page - Vishay Siliconix TLMH3100 Datasheet HTML 7Page - Vishay Siliconix  
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TLMV3100
Vishay Telefunken
2 (7)
Rev. A1, 04-Feb-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 83042
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLMH3100 ,TLMG3100 ,
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage per diode
IR = 10 mA
VR
6
V
DC forward current per diode
Tamb ≤ 60°C
IF
30
mA
Surge forward current per diode
tp ≤ 10 ms
IFSM
0.5
A
Power dissipation per diode
Tamb ≤ 60°C
PV
100
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
–40 to +100
°C
Storage temperature range
Tstg
–55 to +100
°C
Soldering temperature
t
≤ 5 s
Tsd
260
°C
Thermal resistance junction/ambient
mounted on PC board
(pad size > 16 mm2)
RthJA
400
K/W
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
High efficiency red (TLMH3100 )
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Luminous intensity
IF = 10 mA
IV
2.5
6
mcd
Dominant wavelength
IF = 10 mA
ld
612
625
nm
Peak wavelength
IF = 10 mA
lp
635
nm
Angle of half intensity
IF = 10 mA
ϕ
±60
deg
Forward voltage per diode
IF = 10 mA
VF
2.4
3
V
Reverse current per diode
VR = 6 V
IR
10
mA
Junction capacitance per diode
VR = 0, f = 1 MHz
Cj
15
pF
Green (TLMG3100 )
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Luminous intensity
IF = 10 mA
IV
2.5
6
mcd
Dominant wavelength
IF = 10 mA
ld
562
575
nm
Peak wavelength
IF = 10 mA
lp
565
nm
Angle of half intensity
IF = 10 mA
ϕ
±60
deg
Forward voltage per diode
IF = 10 mA
VF
2.4
3
V
Reverse current per diode
VR = 6 V
IR
10
mA
Junction capacitance per diode
VR = 0, f = 1 MHz
Cj
15
pF



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