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STM4635 数据表(PDF) 1 Page - SamHop Microelectronics Corp. |
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STM4635 数据表(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() S mHop Microelectronics C orp. a STM4635 Symbol VDS VGS IDM A ID Units Parameter -40 -7 -39 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max -40V -7A 50 @ VGS=-4.5V 33 @ VGS=-10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. P-Channel Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted Limit Drain Current-Continuous -Pulsed b A www.samhop.com.tw Aug,15,2008 1 Details are subject to change without notice. TA=25°C ESD Procteced ) a 50 W PD °C 2.5 -55 to 150 °C/W TA=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA a a Ver 1.0 TA=70°C A -5.6 TA=70°C W 1.6 EAS Single Pulse Avalanche Energy d mJ 35 S O-8 1 4 3 2 1 D D D D G S S 5 6 7 8 S |
类似零件编号 - STM4635 |
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类似说明 - STM4635 |
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