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STM4637 数据表(PDF) 3 Page - SamHop Microelectronics Corp.

部件名 STM4637
功能描述  P-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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制造商  SAMHOP [SamHop Microelectronics Corp.]
网页  http://www.samhop.com.tw
标志 SAMHOP - SamHop Microelectronics Corp.

STM4637 数据表(HTML) 3 Page - SamHop Microelectronics Corp.

  STM4637 Datasheet HTML 1Page - SamHop Microelectronics Corp. STM4637 Datasheet HTML 2Page - SamHop Microelectronics Corp. STM4637 Datasheet HTML 3Page - SamHop Microelectronics Corp. STM4637 Datasheet HTML 4Page - SamHop Microelectronics Corp. STM4637 Datasheet HTML 5Page - SamHop Microelectronics Corp. STM4637 Datasheet HTML 6Page - SamHop Microelectronics Corp. STM4637 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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STM4637
Ver 1.1
www.samhop.com.tw
May,13,2008
3
T j ( °
C )
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
-ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C )
Figure 6. Breakdown Voltage Variation
with Temperature
-50
-25
0
25
50
75
100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
35
28
21
14
7
0
VGS =10V
VGS =3V
VGS =3.5V
VGS =4V
VGS =4.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20
12
8
4
0
16
-55 C
T j=125 C
0.7
1.4
2.1
2.8
3.5
4.2
25 C
0.0
78
65
52
39
26
13
0
35
1
7
14
21
28
V GS =10V
V GS =4.5V
0
V G S =-4.5V
ID=-6.2A
V G S =-10V
ID=-7.7A
150
125
100
75
50
25
0.0
1.0
1.2
1.3
1.4
1.5
1.1
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V DS =V GS
ID=-250uA
-50
-25
0
25
50
75
100 125 150
ID=-250uA



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