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STS8235 数据表(PDF) 4 Page - SamHop Microelectronics Corp.

部件名 STS8235
功能描述  Dual N-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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制造商  SAMHOP [SamHop Microelectronics Corp.]
网页  http://www.samhop.com.tw
标志 SAMHOP - SamHop Microelectronics Corp.

STS8235 数据表(HTML) 4 Page - SamHop Microelectronics Corp.

  STS8235 Datasheet HTML 1Page - SamHop Microelectronics Corp. STS8235 Datasheet HTML 2Page - SamHop Microelectronics Corp. STS8235 Datasheet HTML 3Page - SamHop Microelectronics Corp. STS8235 Datasheet HTML 4Page - SamHop Microelectronics Corp. STS8235 Datasheet HTML 5Page - SamHop Microelectronics Corp. STS8235 Datasheet HTML 6Page - SamHop Microelectronics Corp. STS8235 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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background image
0.1
1
10
30
100
50
10
1
0.1
STS8235
Ver 1.0
www.samhop.com.tw
Aug,14,2008
4
90
75
60
45
30
15
0
2
4
6
8
10
0
ID=4.5A
25 C
125 C
75 C
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
20.0
10.0
1.0
5.0
0
0.3
0.6
0.9
1.2
1.5
25 C
75 C
125 C
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
600
500
400
300
200
100
0
0
2
4
6
8
10
12
C rs s
C s s
o
C s s
i
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
10
8
6
4
2
0
V DS = 15V
ID=4.5A
0
1
2
3
4
5
6
7
8
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
60
600
V DS =15V ,ID=1A
V G S =4.5 V
1
1
6 10
60 100
600
300
T D ( o f f )
T D ( o n )
T r
T f
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
DC
10m
s
100
ms
1m
s
100
us
R
DS
(O
N)
Lim
it
V GS =4.5V
S ingle P uls e
T A=25 C



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