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LTC4213

4213f

∆VGSMAX – ∆VGSARM

Difference Between ∆VGSMAX and

VSENSEN = 0, VCC ≥ 2.97V

●

0.3

1.1

∆VGSARM

VSENSEN = 0, VCC = 2.3V

●

0.15

0.8

VREADY(OL)

READY Pin Output Low Voltage

IREADY = 1.6mA, Pull Down Device On

●

0.2

0.4

IREADY(LEAK)

READY Pin Leakage Current

VREADY = 5V, Pull Down Device Off

●

±1

µA

VON(TH)

ON Pin High Threshold

ON Rising, GATE Pulls Up

●

0.76

0.8

0.84

∆VON(HYST)

ON Pin Hysteresis

ON Falling, GATE Pulls Down

VON(RST)

ON Pin Reset Threshold

ON Falling, Fault Reset, GATE Pull Down

●

0.36

0.4

0.44

ION(IN)

ON Pin Input Current

VON = 1.2V

●

±1

µA

∆VOV

Overvoltage Threshold

●

0.41

0.7

1.1

∆VOV = VSENSEP – VCC

tOV

Overvoltage Protection Trip Time

VSENSEP = VSENSEN = Step 5V to 6.2V

160

µs

tFAULT(SLOW)

VCB Trips to GATE Discharging

∆VSENSE Step 0mV to 50mV,

●

716

µs

VSENSEN Falling, VCC = VSENSEP = 5V

tFAULT(FAST)

VCB(FAST) Trips to GATE Discharging

∆VSENSE Step 0V to 0.3V, VSENSEN Falling,

●

2.5

µs

VSENSEP = 5V

tDEBOUNCE

Startup De-Bounce Time

VON = 0V to 2V Step to Gate Rising,

130

µs

(Exiting Reset Mode)

tREADY

READY Delay Time

VGATE = 0V to 8V Step to READY Rising,

115

µs

VSENSEP = VSENSEN = 0

tOFF

Turn-Off Time

VON = 2V to 0.6V Step to GATE Discharging

1.5

µs

tON

Turn-On Time

VON = 0.6V to 2V Step to GATE Rising,

µs

(Normal Mode)

tRESET

Reset Time

VON Step 2V to 0V

150

µs

Note 1: Absolute Maximum Ratings are those values beyond which the life

of a device may be impaired.

ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating

temperature range, otherwise specifications are at TA = 25°C. VCC = 5V, ISEL = 0 unless otherwise noted. (Note 2)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Note 2: All currents into device pins are positive; all currents out of device

pins are negative. All voltages are referenced to ground unless otherwise

specified.

LTC4213IDDB 数据表(PDF) 3 Page - Linear Technology

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