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BQ3285ESS 数据表(PDF) 12 Page - Texas Instruments |
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BQ3285ESS 数据表(HTML) 12 Page - Texas Instruments |
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12 / 29 page  12 Recommended DC Operating Conditions—bq3285E (T A = TOPR) Symbol Parameter Minimum Typical Maximum Unit VCC Supply voltage 4.5 5.0 5.5 V VSS Supply voltage 0 0 0 V VIL Input low voltage -0.3 - 0.8 V VIH Input high voltage 2.2 - VCC + 0.3 V VBC Backup cell voltage 2.5 - 4.0 V Note: Typical values indicate operation at TA = 25°C. Recommended DC Operating Conditions—bq3285L (T A = TOPR) Symbol Parameter Minimum Typical Maximum Unit VCC Supply voltage 2.7 3.15 3.6 V VSS Supply voltage 0 0 0 V VIL Input low voltage -0.3 - 0.6 V VIH Input high voltage 2.2 - VCC + 0.3 V VBC Backup cell voltage 2.4 - 4.0 V Note: Typical values indicate operation at TA = 25°C. Crystal Specifications—bq3285E/L (DT-26 or Equivalent) Symbol Parameter Minimum Typical Maximum Unit fO Oscillation frequency - 32.768 - kHz CL Load capacitance - 6 - pF TP Temperature turnover point 20 25 30 °C k Parabolic curvature constant - - -0.042 ppm/°C Q Quality factor 40,000 70,000 - R1 Series resistance - - 45 K Ω C0 Shunt capacitance - 1.1 1.8 pF C0/C1 Capacitance ratio - 430 600 DL Drive level - - 1 µW ∆f/fO Aging (first year at 25°C) - 1 - ppm bq3285E/L |
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